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(Seoul=NSP NEWS AGENCY) = Samsung Electronics became the first developer of 12 nm-class 32 Gb DDR5 DRAM, which has the highest storage ever for a single DRAM chip.

The 32 Gb product provides two times larger storage capacity than 16 Gb DRAM through improved architecture within the same package size, allowing the manufacturing of 128 GB modules without TSV.

In addition, when on the same 128 GB module, it consumes 10% less power than modules with 16 Gb DRAM. Thus, it is expected to be the best solution for tech companies prioritizing energy efficiency, such as data centers.

The largest Korean company plans to continuously expand its high-capacity DRAM portfolio starting from this development. Its second plan is partnerships with global tech companies to drive the next-generation DRAM market through high-capacity, high-performance, low-power DRAM products for the AI era.

Samsung officials said, “The new development secures a solution to upgrade to 1 TB module in the future” and added, “Our group is and will break the limits of memory technology by our differentiated process and design”.

Its targeted mass-producing schedule for 12 nm-class 32 Gb DDR5 DRAM is before the end of 2023.

By Hyun-jin Kim(kimhj30310@nspna.com) and Bok-hyun Lee(bhlee2016@nspna.com)

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