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(Seoul=NSP NEWS AGENCY) = Samsung Electronics has started mass production of its 1-terabit (Tb) Quad-Level Cell (QLC) 9th-generation V-NAND, designed for ultra-high capacity server SSDs in the AI era.

The 9th-gen V-NAND from Samsung features an industry-leading double-stack structure, achieved using its unique channel hole etching technology. This advancement allows Samsung to reach the highest number of layers in the industry. Notably, the new QLC 9th-gen V-NAND reduces cell and peripheral area size, resulting in a 86% increase in bit density compared to previous generations.

The 9th-gen QLC also improves performance through a predictive programming technology that minimizes unnecessary operations by anticipating cell state changes. This innovation has doubled the write performance and increased data input/output speeds by 60% compared to earlier QLC products.

Additionally, Samsung has incorporated a low-power design that reduces the operating voltage of NAND cells and senses only the necessary Bit Lines (BL), cutting power consumption for read and write operations by approximately 30% and 50%, respectively.

Samsung plans to start with branded products and gradually expand the application of 9th-gen QLC V-NAND technology to mobile UFS, PC, and server SSD products.

By Eun-young Huh(eunyoung114@nspna.com) and Jeonghwa Choi(choijh@nspna.com)

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