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(Seoul=NSP NEWS AGENCY) = Samsung Electronics has begun mass production of 1Tb(Terabit) TLC(Triple Level Cell) 9th generation V-NAND.

Samsung Electronics increased the bit density of its 1Tb TLC 9th generation V-NAND by about 1.5 times compared to the previous generation by implementing the industry’s smallest cell size and minimum mold thickness.

Samsung Electronics’ 9th generation V-NAND is the highest level product that can be implemented in a double stack structure, and productivity has also improved through process innovation that penetrates the industry’s largest number of levels at once through Channel Hole Etching technology.

The 9th generation V-NAND uses Toggle 5.1, the next-generation NAND flash interface, and achieves a data input/output speed of up to 3.2Gbps, a 33% improvement over the 8th generation V-NAND.

Based on this, Samsung Electronics plans to solidify its leadership in NAND flash technology by supporting the PCIe 5.0 interface and expanding the high-performance SSD market.

The 9th Gen V-NAND also features low-power design technology, which improves power consumption by approximately 10 per cent over previous generation products.

In addition to TLC 9th generation V-NAND, Samsung Electronics plans to mass-produce QLC(Quad Level Cell) 9th generation V-NAND in the second half of this year to accelerate the development of high-capacity and high-performance NAND flash required in the AI era.

By Soon-ki Lee(s8789@nspna.com) and Bok-hyun Lee(bhlee2016@nspna.com)

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