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(Seoul=NSP News Agency) jeonghyun go Journalist = SK Hynix developed 3rd generation 10nm-Class DDR4 DRam with 16Gbit.

The chip with 16Gb, the biggest storage, is also the biggest one among any other chips in terms of RAM.
Its productivity also increased by 27% compared to the previous one, and it became competitive with special EUV that they can produce and obtain themselves without any photo lithography process.

The data transfer speed goes upto 3200Mbps, the top speed of DDR4, which is still stable. With the electricity efficiency improved, it ends up reducing 40% of power consumption compared to the 2nd generation previous model with the same capacity and 8Gb.

The 3rd generation model also maximized its capacitance which plays a key role in running DRam by using the new material that has never been adapted before. Additionally, it became safe with new technology.

Meanwhile, SK Hynix plans to enlarge its industry by developing the 3rd generation 10nm tech that LPDDR5, the next generation model and HBM3, the top speed DRam need to utilize.

NSP News Agency jeonghyun go Journalist gojh89@nspna.com
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